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Yong Jin Jeong 3 Articles
557 Improvement of Device Characteristics of Low Temperature IGZO Thin-film Transistors through Laser Post Annealing
레이저 후열처리 공정을 통한 저온공정형 IGZO 박막 트랜지스터의 특성 개선에 관한 연구
Jae-Yun Lee, Anvar Tukhtaev, Suchang Yoo, Yong-Hwan Kim, Seong-Gon Choi, Heung Gyoon Ryu, Yong Jin Jeong, Sung-Jin Kim
이재윤, Anvar Tukhtaev, 유수창, 김용환, 최성곤, 유흥균, 정용진, 김성진
Korean J. Met. Mater. 2022;60(8):557-563.   Published online 2022 Jul 12
DOI: https://doi.org/10.3365/KJMM.2022.60.8.557

Abstract
High-performance thin-film transistors (TFTs) produced at low temperatures are required for ultrahigh- resolution and flexible display applications. The scientific community has been studying unconventional techniques to investigate low voltage flexible devices and low power flexible circuits for the past decade. In particular, metal oxide semiconductors, such as indium gallium zinc..... More

                        
307 Enhanced Electrical Performance and Bias Stability of a-IGZO Thin-Film Transistor by Ultrasonicated Pre-annealing
초음파 전열처리를 이용한 a-IGZO 트랜지스터의 향상된 전기적 성능과 바이어스 안정성
Jae-Yun Lee, Suchang Yoo, Han-Lin Zhao, Seong-Gon Choi, Heung Gyoon Ryu, Yong Jin Jeong, Sung-Jin Kim
이재윤, 유수창, 조한림, 최성곤, 유흥균, 정용진, 김성진
Korean J. Met. Mater. 2022;60(4):307-314.   Published online 2022 Mar 28
DOI: https://doi.org/10.3365/KJMM.2022.60.4.307

Abstract
Vacuum-processed oxide semiconductors have enabled incredible recent advances in the scientific research of metal oxide thin-film transistors (TFTs) and their introduction in commercial displays. Developing metal oxide transistors with low processing temperatures, on the other hand, remains a challenge. Metal oxide transistors are commonly produced at high processing temperatures (over..... More

                        
162 Study of Self-Patterned Zinc Tin Oxide Thin-Film Transistors Prepared from Photocurable Precursor Solution with Photoacid Generator
Photoacid generator가 포함된 광경화성 전구체 기반 자가패턴 가능한 용액 공정형 Zinc Tin 산화물 트랜지스터 연구
Jae Young Kim, Geonoh Choe, Tae Kyu An, Yong Jin Jeong
김재영, 최건오, 안태규, 정용진
Korean J. Met. Mater. 2021;59(3):162-167.   Published online 2021 Feb 19
DOI: https://doi.org/10.3365/KJMM.2021.59.3.162

Abstract
Solution-processed zinc tin oxide (ZTO) thin-film transistors (TFTs) have great potential uses in next-generation wearable and flexible electronic products. Zinc and tin precursor materials are naturally abundant and have low fabrication costs. To integrate a single ZTO TFT into logic circuits including inverters, NAND, and NOR gates will require the..... More

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