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Thermoelectric Performance of Sn and Bi Double-Doped Permingeatite
Hee-Jae Ahn, Il-Ho Kim
Korean J. Met. Mater. 2022;60(8):593-600.   Published online 2022 Jul 12
DOI: https://doi.org/10.3365/KJMM.2022.60.8.593

In this study, mechanical alloying was performed to synthesize permingeatite Cu3Sb1-x-ySnxBiySe4 (0.02 ≤ x ≤ 0.06 and 0.02 ≤ y ≤ 0.04) doped with Sn and Bi. Hot pressing was subsequently conducted to achieve dense sintered bodies. When the Bi content was constant, the carrier concentration increased with the Sn..... More

Enhancement of thermoelectric power factor by modulation doping of bulk polycrystalline SnS / thin film PEDOT:PSS bilayer
벌크 다결정 SnS / PEDOT:PSS 박막 이중층에서의 변조 도핑을 통한 열전 역률 강화
Dongwook Lee
Korean J. Met. Mater. 2022;60(7):531-536.   Published online 2022 Jun 3
DOI: https://doi.org/10.3365/KJMM.2022.60.7.531

Modulation doping occurs in a heterojunction where a charge carrier-rich material transfers charge to a carrier-deficient material. The modulation-doped material is intentionally selected to have higher charge carrier mobility than the modulation dopant material, so that the overall electrical conductivity can be boosted. Although this modulation doping strategy has proven..... More

Enhanced Photoelectrochemical Water-Splitting through Application of Layer by Layer (LBL) and Hydrothermal (HT) Methods in TiO<sub>2</sub> and -Fe<sub>2</sub>O<sub>3</sub> Hierarchical Structures
Aryan Azad, Sun Jae Kim
Korean J. Met. Mater. 2022;60(7):517-522.   Published online 2022 Jun 3
DOI: https://doi.org/10.3365/KJMM.2022.60.7.517

Improving solar energy conversion efficiency and reducing energy loss have become critical issues in recent decades. Photoelectrochemical (PEC) water splitting provides an ideal method for solar energy harvesting and is a key factor in decreasing the use of fossil fuels. Thus, it is extremely important to identify cost-effective, highly active,..... More

Solid-State Synthesis and Thermoelectric Properties of Ge-Doped Tetrahedrites Cu<sub>12</sub>Sb<sub>4-y</sub>Ge<sub>y</sub>S<sub>13</sub>
Se-In Jeong, Il-Ho Kim
Korean J. Met. Mater. 2022;60(5):376-383.   Published online 2022 Apr 22
DOI: https://doi.org/10.3365/KJMM.2022.60.5.376

Ge-doped tetrahedrites Cu12Sb4-yGeyS13 (y = 0.1–0.4) were prepared using mechanical alloying and hot pressing. An X-ray diffraction analysis after mechanical alloying showed a single tetrahedrite phase without secondary phases. The tetrahedrite phase was stable after hot pressing at 723 K under 70 MPa. As the Ge content increased, the lattice..... More

Thermoelectric Properties of Ta-doped Zr<sub>0.6-x</sub>Ti<sub>0.4</sub>Ta<sub>x</sub>NiSn n-type Half-Heusler Materials
Ta 도핑된 Zr0.6-xTi0.4TaxNiSn n형 하프-호이슬러 소재의 열전특성
Sung-Jae Joo, Ji-Hee Son, JeongIn Jang, Bok-Ki Min, Bong-Seo Kim
주성재, 손지희, 장정인, 민복기, 김봉서
Korean J. Met. Mater. 2022;60(3):213-219.   Published online 2022 Feb 8
DOI: https://doi.org/10.3365/KJMM.2022.60.3.213

Half-Heusler (HH) thermoelectric materials are promising for mid- to high-temperature applications, and MNiSn (M = Ti, Zr, Hf) is a representative n-type HH alloy. In general, the M sites are mixed with isoelectronic elements Ti, Zr, and Hf, to lower the lattice thermal conductivity, and the Sn sites are doped..... More

A Study on Graphene Structure Control Using Ammonia Gas for a Highly Sensitive Pressure Sensor
암모니아를 이용한 그래핀 구조 제어 및 고감도 압력 센서로의 적용
Yeon Wook Jung, Seung Geun Jo, Hae-In Moon, Young Won Kim, Yujin Shin, Gil-Ryeong Park, Jung Woo Lee
정연욱, 조승근, 문해인, 김영원, 신유진, 박길령, 이정우
Korean J. Met. Mater. 2022;60(3):206-212.   Published online 2022 Feb 8
DOI: https://doi.org/10.3365/KJMM.2022.60.3.206

Graphene has been used in various fields because of its excellent mechanical, optical, electrical, and thermal properties. However, its intrinsic low sensitivity to pressure limits its sensor applications. To overcome this drawback, many researchers have tried to improve the sensitivity by controlling the defects on the graphene, but have yet..... More

                           Cited By 1
Recent Research Trends for Improving the Stability of Organo/Inorgano Halide Perovskites
유무기 하이브리드 할라이드 페로브스카이트의 안정성 향상을 위한 연구 동향 리뷰
Myeong Jin Seol, Jeong Woo Han, Seung Hwan Hwang, Soo Young Kim
설명진, 한정우, 황승환, 김수영
Korean J. Met. Mater. 2022;60(1):1-13.   Published online 2021 Dec 10
DOI: https://doi.org/10.3365/KJMM.2022.60.1.1

Because of their superior optical, and electrical properties, lead halide perovskites have emerged as potential materials for light-emitting-diodes. However, some obstacles have yet to be overcome for practical applications including low exciton binding energy, the difficulty of fabricating uniform perovskite films,, and their instability to heat, light, and moisture. In..... More

                           Cited By 4
Electronic Transport and Thermoelectric Properties of Te-Doped Tetrahedrites Cu<sub>12</sub>Sb<sub>4-y</sub>Te<sub>y</sub>S<sub>13</sub>
Sung-Gyu Kwak, Go-Eun Lee, Il-Ho Kim
Korean J. Met. Mater. 2021;59(8):560-566.   Published online 2021 Jul 5
DOI: https://doi.org/10.3365/KJMM.2021.59.8.560

Tetrahedrite is a promising thermoelectric material mainly due to its low thermal conductivity, a consequence of its complicated crystal structure. However, tetrahedrite has a high hole concentration; therefore, optimizing carrier concentration through doping is required to maximize the power factor. In this study, Te-doped tetrahedrites Cu12Sb4-yTeyS13 (0.1 ≤ y ≤..... More

                           Cited By 1
Preparation of Li-Doped Indium-Zinc Oxide Thin-Film Transistor at Relatively Low Temperature Using Inkjet Printing Technology
잉크젯 인쇄 기술을 이용하여 상대적으로 낮은 온도에서 리튬이 도핑 된 인듐-아연-산화물 트랜지스터의 제작
Woon-Seop Choi
Korean J. Met. Mater. 2021;59(5):314-320.   Published online 2021 Apr 6
DOI: https://doi.org/10.3365/KJMM.2021.59.5.314

Inkjet printing is a very attractive technology for printed electronics and a potential alternative to current high cost and multi-chemical lithography processes, for display and other applications in the electronics field. Inkjet technology can be employed to fabricate organic light emitting diodes (OLED), quantum dots displays, and thin-film transistors (TFTs)...... More

                           Cited By 3
Influence of Cu Doping on Bipolar Conduction Suppression for <i>p</i>-type Bi<sub>0.5</sub>Sb<sub>1.5</sub>Te<sub>3</sub> and Bi<sub>0.4</sub>Sb<sub>1.6</sub>Te<sub>3</sub> Alloys
Cu 첨가에 따른 p-type Bi0.5Sb1.5Te3 및 Bi0.4Sb1.6Te3 합금의 양극성 전도 저감 효과
Hyun-Jun Cho, Hyun-Sik Kim, Woong-hee Sohn, Sang-il Kim
조현준, 김현식, 손웅희, 김상일
Korean J. Met. Mater. 2020;58(6):439-445.   Published online 2020 May 21
DOI: https://doi.org/10.3365/KJMM.2020.58.6.439

In this study, we report how Cu doping can modify the thermoelectric performance of p-type Bi0.5Sb1.5Te3 and Bi0.4Sb1.6Te3 thermoelectric alloys, including their electronic and thermal transport properties. For electronic transport, the power factors of both Bi0.5Sb1.5Te3 and Bi0.4Sb1.6Te3 compositions were increased by Cu doping. The origins of the enhanced power..... More

                           Cited By 1
Enhanced Thermoelectric Transport Properties of <i>n</i>-type InSe by Sn doping
Sung-sil Choo, Seok-won Hong, Hyun-Sik Kim, Sang-il Kim
Korean J. Met. Mater. 2020;58(5):348-352.   Published online 2020 Apr 20
DOI: https://doi.org/10.3365/KJMM.2020.58.5.348

Layered post transition metal chalcogenides such as SnSe, SnSe2, In2Se3, and In4Se3 have attracted attention as promising thermoelectric materials due to their intrinsically low lattice thermal conductivities. Recently, n-type indium selenide (InSe) based materials have also been suggested as good candidates for thermoelectric materials by optimizing their electrical properties, i.e.,..... More

                           Cited By 5
Effect of Cu/In Doping on the Thermoelectric Transport Properties of Bi-Sb-Te Alloys
Bi-Sb-Te계 합금의 열전물성에 대한 Cu 및 In 첨가 영향
Hyun Jun Cho, Hyun-Sik Kim, Sang-Il Kim
조현준, 김현식, 김상일
Korean J. Met. Mater. 2019;57(10):673-678.   Published online 2019 Sep 23
DOI: https://doi.org/10.3365/KJMM.2019.57.10.673

Herein we report the effect of Cu/In doping on the electronic and thermal transport properties of Bi-Sb-Te thermoelectric alloys. To closely examine the role of each doping element when incorporated in a Bi0.4Sb1.6Te3 alloy, different groups of samples were prepared and characterized, including undoped Bi0.4Sb1.6Te3, In single-doped samples and In..... More

                           Cited By 6
Electronic Transport and Thermoelectric Properties of Cu<sub>12-x</sub>Zn<sub>x</sub>Sb<sub>4</sub>S<sub>13</sub> Tetrahedrites Prepared by Mechanical Alloying and Hot Pressing
Sung-Gyu Kwak, Go-Eun Lee, Il-Ho Kim
Korean J. Met. Mater. 2019;57(5):328-333.   Published online 2019 Apr 10
DOI: https://doi.org/10.3365/KJMM.2019.57.5.328

Tetrahedrite Cu12Sb4S13 has low lattice thermal conductivity because of the lone-pair electrons of Sb, which cause the Cu atoms to vibrate at a low frequency and high amplitude. When the Cu atoms of Cu12Sb4S13 are partially substituted with a transition metal, changes in the Cu vibrations can intensify phonon scattering,..... More

                           Cited By 5
Thermoelectric Properties of MnSi1.74-1.75:Ge<i>m</i> Prepared by Solid-State Reaction and Hot Pressing
In-Jae Lee, Sol-Bin Park, Soon-Chul Ur, Kyung-Wook Jang, Il-Ho Kim
Korean J. Met. Mater. 2019;57(4):264-269.   Published online 2019 Apr 5
DOI: https://doi.org/10.3365/KJMM.2019.57.4.264

Higher manganese silicides (HMSs) MnSi1.74-1.75:Gem (m = 0.01–0.04) were prepared by solid-state reaction and hot pressing. The major phases of the HMSs were Mn27Si47 or Mn4Si7, and a small quantity of Si remained, but the intermetallic compound MnSi was not formed. The lattice constant increased with the substitution of Ge..... More

                           Cited By 1
Doping Effect of Indium on Zinc-tin Oxide Thin-Film Transistor Using Electrohydrodynamic Jet Spray Technology
전기수력학젯 분산 기술을 이용한 아연-주석 산화물 박막트랜지스터의 인듐 도핑 효과
Woon-Seop Choi
Korean J. Met. Mater. 2019;57(4):258-263.   Published online 2019 Apr 5
DOI: https://doi.org/10.3365/KJMM.2019.57.4.258

The effect of indium doping on zinc-tin oxide thin-film transistor was investigated using electrohydrodynamic (EHD) jet spray technology. EHD jet spray is a new and unique drop-on-demand patterning technology for printed electronics. After optimizing process parameters, the EHD jet spraying conditions were determined to be a voltage of 4.5 kV,..... More

                           Cited By 1
Effect of Zn Doping on an Inkjet-Printed Metal Oxide Thin-Film Transistor at Low Temperature of 200 <sup>o</sup>C
저온 200 oC에서 잉크젯인쇄에 의한 금속산화물 박막트랜지스터의 아연도핑 효과
Woon-Seop Choi
Korean J. Met. Mater. 2019;57(3):170-175.   Published online 2019 Feb 8
DOI: https://doi.org/10.3365/KJMM.2019.57.3.170

Amorphous oxide semiconductors have attracted much attention due to their good electrical properties with wide band gaps and low cost process, which are used as backplanes for displays. However, there are some issues regarding low temperature process with high mobility and printing capability. The inkjet method is an attractive technology..... More

                           Cited By 1
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