Abstract
In this study, the architecture of an interfacial switching memristor, which has a metal-insulatormetal structure of Pt/SrTiO₃/Nb-SrTiO₃ was investigated. The performance of a neural network that uses memristors as its synapse components was also examined with system-level simulations. A finite element solver, COMSOL Multiphysics, was used to simulate synaptic device..... More

Abstract
Memristors have been extensively investigated as the fourth fundamental circuit element. Titanium oxide is a common material used to fabricate memristors. In this paper, we investigated the influence of the thickness of the oxide active layer on the Al/TiO2-x/TiO2/heavily doped electrode memristor architecture. An insulating TiO2 thin-film was deposited using..... More