Korean J. Met. Mater.
2019;57(7):438-446. Published online 2019 Jun 5
We investigated the effect of rapid thermal annealing (RTA) temperature report on oxygendeficient rutile TiO2-x
thin-film transistors deposited by RF magnetron sputtering. Amorphous TFTs that use TiO2-x
semiconductors as an active layer can be fabricated by low-temperature process and show remarkable electrical performance. The RTA post-annealing process provides greater production..... More