Abstract
In this study, ultrathin (4-40 nm) Cu-layer-based transparent heaters prepared on glass substrates were investigated for cost-effective applications. The Cu heaters were embedded between ZnO layers serving as anti-reflection and anti-corrosion layers. The Cu layer thicknesses varied in the range of 4-40 nm, and the corresponding structural, electrical, optical and..... More

Abstract
Vacuum-processed oxide semiconductors have enabled incredible recent advances in the scientific research of metal oxide thin-film transistors (TFTs) and their introduction in commercial displays. Developing metal oxide transistors with low processing temperatures, on the other hand, remains a challenge. Metal oxide transistors are commonly produced at high processing temperatures (over..... More

Abstract
In this study, we prepared highly thermostable semi-transparent heaters composed of W layers with thicknesses of 1-20 nm, on which a 30 nm-thick ZnO layer was deposited to serve as an anti-oxidation barrier. The optical transmittance and sheet resistance of the heaters could be greatly modulated by varying the W..... More

Abstract
In this study, the critical role of substrate bias during the sputter deposition of Al thin films is discussed. Two sets of Al thin films having a nominal thickness of 300 nm were deposited at sputtering pressures of 4.1 and 1.5 mTorr, respectively, with an applied negative substrate bias in..... More

Abstract
With the expanding development of flexible optoelectronic devices, the need for high-performance (i.e., high conductivity, high transmittance and flexibility) transparent conductive electrodes has grown. In this study, the critical role of thickness for each of the layers in ZnO/Cu/ZnO transparent conductive electrodes (TCE) for optoelectronic devices has been investigated. The..... More

Abstract
We investigated the effect of rapid thermal annealing (RTA) temperature report on oxygendeficient rutile TiO_2-x thin-film transistors deposited by RF magnetron sputtering. Amorphous TFTs that use TiO_2-x semiconductors as an active layer can be fabricated by low-temperature process and show remarkable electrical performance. The RTA post-annealing process provides greater production..... More

Abstract
The critical role of the thicknesses of the top and bottom oxide layers, as well as Ag layer, in ZnO/Ag/ZnO transparent conductive electrodes were investigated. The Ag forms a nearly continuous layer at the thickness of 8 nm, at which the Ag sheet resistance of 8.0 Ω/Sq. is lower than..... More

Abstract
Memristors have been extensively investigated as the fourth fundamental circuit element. Titanium oxide is a common material used to fabricate memristors. In this paper, we investigated the influence of the thickness of the oxide active layer on the Al/TiO2-x/TiO2/heavily doped electrode memristor architecture. An insulating TiO2 thin-film was deposited using..... More

Abstract
We investigated solution-processed indium zinc oxide (IZO) thin-film transistors (TFTs) which were fabricated by spin coating with simultaneous irradiation by ultraviolet light. The proposed treatment enhanced the efficient condensation and densification of the oxide semiconducting channel layer by decreasing oxygen-vacancy-related defects and increasing metal-oxide bonds. An IZO TFT irradiated for..... More

Abstract
An AlCrTiSiN film composed of 31Al-15Cr-1.7Ti-0.5Si-51.8N (at%) was deposited on a steel substrate by arc ion plating to a thickness of 1 μm. It consisted of nano crystalline hcp-AlN and fcc-CrN. Its corrosion behavior in Ar-1%SO₂ gas at 800 ℃ for 5-50 h was studied. The resulting scales consisted primarily..... More

Abstract
Sn-doped ZnO (ZTO)/Ag/ZTO tri-layer films were deposited on glass substrates by radio frequency (RF) and direct current (DC) magnetron sputtering and then vacuum annealed at 100, 200 and 300 ℃ for 30 min with a proportions of H₂/N₂ gas flow of 6/6 sccm, to investigate the effects of annealing temperature..... More

Material Analysis & Characterization

Abstract
ZnO buffer layers were deposited on mica substrates using a sol-gel spin coating method. Then, a thin film of metallic Zn was deposited onto the ZnO buffer layer/mica substrate using a thermal evaporator, and the deposited Zn thin films were then thermally oxidized in a furnace at 500 ℃ for..... More

Optical Devices & Energy Materials

Abstract
The vapor phase transport (VPT) process is usually used for the growth of one-dimensional nanostructures rather than for film deposition. In this study, for the first time, we report on the fabrication and optical propeties of ZnO film produced by VPT combined with rapid heating. The X-ray diffraction results showed..... More

Electronic Materials

Abstract
In and Ga doped ZnO (IGZO, 100-nm thick) thin films were deposited by radio frequency magnetron sputtering without intentional substrate heating on a bare glass substrate and a TiO₂-deposited glass substrate to determine the effect of the thickness of a thin TiO₂ buffer layer on the structural, optical, and electrical..... More