Ji Hun Um, Byoung Su Choi, Woo Sik Jang, Sungu Hwang, Dae-Woo Jeon, Jin Kon Kim, Hyun Cho
Korean J. Met. Mater.
;59(2):121-126. Published online 2021 Jan 27
has the largest bandgap (~5.3 eV) among the five polymorphs of Ga2
and is a promising candidate for high power electronic and optoelectronic devices. To fabricate various device structures, it is important to establish an effective dry etch process which can provide practical etch rate, smooth surface morphology and..... More