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Improvement of Device Characteristics of Low Temperature IGZO Thin-film Transistors through Laser Post Annealing
레이저 후열처리 공정을 통한 저온공정형 IGZO 박막 트랜지스터의 특성 개선에 관한 연구
Jae-Yun Lee, Anvar Tukhtaev, Suchang Yoo, Yong-Hwan Kim, Seong-Gon Choi, Heung Gyoon Ryu, Yong Jin Jeong, Sung-Jin Kim
이재윤, Anvar Tukhtaev, 유수창, 김용환, 최성곤, 유흥균, 정용진, 김성진
Korean J. Met. Mater. 2022;60(8):557-563.   Published online 2022 Jul 12
DOI: https://doi.org/10.3365/KJMM.2022.60.8.557

High-performance thin-film transistors (TFTs) produced at low temperatures are required for ultrahigh- resolution and flexible display applications. The scientific community has been studying unconventional techniques to investigate low voltage flexible devices and low power flexible circuits for the past decade. In particular, metal oxide semiconductors, such as indium gallium zinc..... More

Enhanced Electrical Performance and Bias Stability of a-IGZO Thin-Film Transistor by Ultrasonicated Pre-annealing
초음파 전열처리를 이용한 a-IGZO 트랜지스터의 향상된 전기적 성능과 바이어스 안정성
Jae-Yun Lee, Suchang Yoo, Han-Lin Zhao, Seong-Gon Choi, Heung Gyoon Ryu, Yong Jin Jeong, Sung-Jin Kim
이재윤, 유수창, 조한림, 최성곤, 유흥균, 정용진, 김성진
Korean J. Met. Mater. 2022;60(4):307-314.   Published online 2022 Mar 28
DOI: https://doi.org/10.3365/KJMM.2022.60.4.307

Vacuum-processed oxide semiconductors have enabled incredible recent advances in the scientific research of metal oxide thin-film transistors (TFTs) and their introduction in commercial displays. Developing metal oxide transistors with low processing temperatures, on the other hand, remains a challenge. Metal oxide transistors are commonly produced at high processing temperatures (over..... More

Effect of Rapid Thermal Annealing Temperature on Oxygen-Deficient TiO2-x-based Thin-Film Transistors Deposited by RF Magnetron Sputtering
RF 마그네트론 스퍼터링으로 증착한 산소 결핍 구조 TiO2-x 박막 트랜지스터에 미치는 급속 열처리 온도의 영향
Han-Sang Kim, Jae-Yun Lee, Sung-Jin Kim
김한상, 이재윤, 김성진
Korean J. Met. Mater. 2019;57(7):438-446.   Published online 2019 Jun 5
DOI: https://doi.org/10.3365/KJMM.2019.57.7.438

We investigated the effect of rapid thermal annealing (RTA) temperature report on oxygendeficient rutile TiO2-x thin-film transistors deposited by RF magnetron sputtering. Amorphous TFTs that use TiO2-x semiconductors as an active layer can be fabricated by low-temperature process and show remarkable electrical performance. The RTA post-annealing process provides greater production..... More

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