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Improvement of Device Characteristics of Low Temperature IGZO Thin-film Transistors through Laser Post Annealing
레이저 후열처리 공정을 통한 저온공정형 IGZO 박막 트랜지스터의 특성 개선에 관한 연구
Jae-Yun Lee, Anvar Tukhtaev, Suchang Yoo, Yong-Hwan Kim, Seong-Gon Choi, Heung Gyoon Ryu, Yong Jin Jeong, Sung-Jin Kim
이재윤, Anvar Tukhtaev, 유수창, 김용환, 최성곤, 유흥균, 정용진, 김성진
Korean J. Met. Mater. 2022;60(8):557-563.   Published online 2022 Jul 12
DOI: https://doi.org/10.3365/KJMM.2022.60.8.557

Abstract
High-performance thin-film transistors (TFTs) produced at low temperatures are required for ultrahigh- resolution and flexible display applications. The scientific community has been studying unconventional techniques to investigate low voltage flexible devices and low power flexible circuits for the past decade. In particular, metal oxide semiconductors, such as indium gallium zinc..... More

                   Web of Science 2  Crossref 2
Enhanced Electrical Performance and Bias Stability of a-IGZO Thin-Film Transistor by Ultrasonicated Pre-annealing
초음파 전열처리를 이용한 a-IGZO 트랜지스터의 향상된 전기적 성능과 바이어스 안정성
Jae-Yun Lee, Suchang Yoo, Han-Lin Zhao, Seong-Gon Choi, Heung Gyoon Ryu, Yong Jin Jeong, Sung-Jin Kim
이재윤, 유수창, 조한림, 최성곤, 유흥균, 정용진, 김성진
Korean J. Met. Mater. 2022;60(4):307-314.   Published online 2022 Mar 28
DOI: https://doi.org/10.3365/KJMM.2022.60.4.307

Abstract
Vacuum-processed oxide semiconductors have enabled incredible recent advances in the scientific research of metal oxide thin-film transistors (TFTs) and their introduction in commercial displays. Developing metal oxide transistors with low processing temperatures, on the other hand, remains a challenge. Metal oxide transistors are commonly produced at high processing temperatures (over..... More

                
Influence of Alloy Content on Microstructure and Corrosion Resistance of Zn-based Alloy Coated Steel Product
Zn계 합금도금재의 미세구조 및 내식성에 미치는 합금 조성 변화 영향
Jae-Won Lee, Sung-Jin Kim, Min-Suk Oh
이재원, 김성진, 오민석
Korean J. Met. Mater. 2020;58(3):169-174.   Published online 2020 Mar 5
DOI: https://doi.org/10.3365/KJMM.2020.58.3.169

Abstract
The effects of alloy composition on the coating structure and corrosion resistance of hot-dip Znbased alloy coated steel products were investigated. Zn-based alloy coating layers with different Al and Mg compositions were fabricated using a batch-type galvanizing simulator. Various intermetallic compounds including Zn, Zn/MgZn2 binary eutectic, Zn/Al binary eutectoid and..... More

                   Web of Science 7  Crossref 5
Effect of Rapid Thermal Annealing Temperature on Oxygen-Deficient TiO2-x-based Thin-Film Transistors Deposited by RF Magnetron Sputtering
RF 마그네트론 스퍼터링으로 증착한 산소 결핍 구조 TiO2-x 박막 트랜지스터에 미치는 급속 열처리 온도의 영향
Han-Sang Kim, Jae-Yun Lee, Sung-Jin Kim
김한상, 이재윤, 김성진
Korean J. Met. Mater. 2019;57(7):438-446.   Published online 2019 Jun 5
DOI: https://doi.org/10.3365/KJMM.2019.57.7.438

Abstract
We investigated the effect of rapid thermal annealing (RTA) temperature report on oxygendeficient rutile TiO2-x thin-film transistors deposited by RF magnetron sputtering. Amorphous TFTs that use TiO2-x semiconductors as an active layer can be fabricated by low-temperature process and show remarkable electrical performance. The RTA post-annealing process provides greater production..... More

                   Web of Science 1  Crossref 1
Influence of the Thickness of TiO2/TiO2-x Layers on the Behavior of a Memristor Device
TiO2/TiO2-x 박막층의 두께가 멤리스터 소자의 특성에 미치는 영향
Han-Sang Kim, Sung-Jin Kim
김한상, 김성진
Korean J. Met. Mater. 2019;57(2):84-90.   Published online 2019 Feb 5
DOI: https://doi.org/10.3365/KJMM.2019.57.2.84

Abstract
Memristors have been extensively investigated as the fourth fundamental circuit element. Titanium oxide is a common material used to fabricate memristors. In this paper, we investigated the influence of the thickness of the oxide active layer on the Al/TiO2-x/TiO2/heavily doped electrode memristor architecture. An insulating TiO2 thin-film was deposited using..... More

                   Web of Science 4  Crossref 5
Study of Solution-Processed Indium Zinc Oxide TFTs Made by Simultaneous Spin Coating and Ultraviolet Light Irradiation
스핀코팅과 자외선 조사의 동시 적용을 기반한 용액 공정형 Indium Zinc 산화물 트랜지스터 연구
Fei Shan, Sung-Jin Kim
선비, 김성진
Korean J. Met. Mater. 2017;55(8):572-575.   Published online 2017 Aug 1
DOI: https://doi.org/10.3365/KJMM.2017.55.8.572

Abstract
We investigated solution-processed indium zinc oxide (IZO) thin-film transistors (TFTs) which were fabricated by spin coating with simultaneous irradiation by ultraviolet light. The proposed treatment enhanced the efficient condensation and densification of the oxide semiconducting channel layer by decreasing oxygen-vacancy-related defects and increasing metal-oxide bonds. An IZO TFT irradiated for..... More

    
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