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Korean Journal of Metals and Materials > Volume 56(4); 2018 > Article
Korean Journal of Metals and Materials 2018;56(4): 304-312. doi: https://doi.org/10.3365/KJMM.2018.56.4.304
Enhanced Electrical Properties and Stability of Solution-processed Amorphous Oxide Thin Film Transistors with Multi-active Layers
Won Seok Choi, Byung Jun Jung, Myoung Seok Kwon
Department of Materials Science and Engineering, The University of Seoul, Seoul 02504, Republic of Korea
Correspondence  Myoung Seok Kwon ,Tel: +82-2-6490-2411, Email: mskwon@uos.ac.kr
Received: 5 January 2017;  Accepted: 5 February 2018.  Published online: 5 April 2018.
We investigated the electrical properties and gate bias stress stability of solution-processed amorphous oxide thin film transistors (TFTs) with multi-stacked active layers. With the multi-layered InZnO (In:Zn = 1:1), mobility was increased from 4.6 to 21.2 cm2V-1s-1 and the subthreshold swing (SS) was improved from 0.71 to 0.54 V/decade compared to the single-layered InZnO TFT. The tri-layered InZnO TFT showed a reduced threshold voltage shift (ΔVth) under positive bias stress (PBS) from +4.4 to + 0.9 V, whereas ΔVth under negative bias stress (NBS) deteriorated from -0.03 to -1.5 V. We also fabricated bi-layered (bottom/top layer) TFTs using different oxide compositions with InZnO (In:Zn = 7:3) and InGaZnO (In:Zn:Ga = 3:3:1) which showed high mobility and small ΔVth under PBS and NBS. The InZnO/InGaZnO TFT showed a high mobility of 17 cm2V-1s-1, SS of 0.65 V/decade, and good stability, with ΔVth under PBS and NBS of +1.2 and -1.2 V, respectively. Both the electrical properties and gate bias stress (GBS) stability were better with the InZnO/InGaZnO TFT than the single-layered InZnO TFT.
Keywords: oxide thin film transistor, multi-active layers, solution-process
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