| 열간 압축 방법으로 제작된 Bi2-xSbxTe3 열전소재 복합체에서 Sb 함량이 전하수송과 출력인자에 미치는 효과 |
| 임영수1, 이순일2 |
1부경대학교 신소재시스템공학과
2한국세라믹기술원 에너지환경소재본부 |
| Effects of Sb on the Charge Transport and Power Factor of Bi2-xSbxTe3 Thermoelectric Compounds Prepared by Hot Pressing |
| Young Soo Lim1, Soonil Lee2 |
1Department of Materials Syetem Engineering, Pukyong National University, Busan 48547, Republic of Korea
2Energy and Environmental Division, Korea Institute of Ceramic Engineering and Technology, Jinju 52851, Republic of Korea |
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Received: 16 February 2017; Accepted: 16 April 2017. Published online: 30 August 2017. |
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| ABSTRACT |
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We report the effects of Sb content on the charge transport and power factor of Bi2-xSbxTe3(1.56 ≤χ≤ 1.74) compounds prepared by hot pressing. From the temperature-dependence of the electrical conductivity, it was found that the charge transport in the compounds was predominantly governed by acoustic phonon scattering, and additionally affected by ionized impurity scattering. Hole concentration increased with increasing Sb content due to the generation of antisite defects, and its process-dependence is discussed in comparison with our previous work. The room-temperature mobility of the compound gradually decreased with increasing Sb content due to the intensification of ionized impurity scattering by the antisite defects, however, the effect of grain boundary scattering on the mobility could not be observed. The Seebeck coefficient decreased with the increase in Sb content, and this effect was interpreted in terms of the carrier concentration and the density-of-state (DOS) effective mass. The DOS effective mass was estimated by Pisaernko relation, and it increased from 0.75 (χ = 1.56) to 0.97 (χ = 1.74) with increasing Sb content due to the non-parabolicity in the valence band of Bi2-xSbxTe3. Based on these results, the effects of Sb content on the power factor were discussed, and the highest power factor of 37.2 × 10-4 Wm-1K-2 was obtained in the Bi0.3Sb1.7Te3 compound at room temperature. |
| Keywords:
thermoelectric, bismuth telluride, hot pressing, charge transport, power factor |
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