| 새로운 EUV 흡수체 연구：니켈 & 니켈 산화물 |
| 우동곤1, 김정환1, 김정식2, 홍성철1, 안진호1,2,3,* |
1한양대학교 공과대학 신소재공학과
2한양대학교 공과대학 나노 반도체 공학과
3한양대학교 나노 과학 기술 연구소 |
| Study of Novel EUV Absorber：Nickel & Nickel Oxide |
| Dong Gon Woo1, Jung Hwan Kim1, Jung Sik Kim2, Seongchul Hong1, Jinho Ahn1,2,3,* |
1Department of Materials Science and Engineering, Hanyang University, Seoul 04763, Republic of Korea
2Department of Nanoscale Semiconductor Engineering, Seoul 04763, Republic of Korea
3Institute of Nano Science and Technology, Seoul 04763, Republic of Korea |
|
|
|
Received: 24 August 2016; Accepted: 26 August 2016. Published online: 3 March 2017. |
|
|
| |
| ABSTRACT |
|
The shadowing effect is one of the most urgent issues yet to be solved in high-volume manufacturing using extreme ultraviolet lithography (EUVL). Many studies have been conducted to mitigate the unexpected results caused by shadowing effects. The simplest way to mitigate the shadowing effect is to reduce the thickness of the absorber. Since nickel has high extinction coefficients in the EUV wavelengths, it is one of more promising absorber material candidates. A Ni based absorber exhibited imaging performance comparable to a Tantalum nitride absorber. However, the Ni-based absorber showed a dramatic reduction in horizontal-vertical critical dimension (H-V CD) bias. Therefore, limitations in fabricating a EUV mask can be mitigated by using the Ni based absorber. |
| Keywords:
extreme ultraviolet lithography, semiconductor, thin film, optical properties, computer simulation |
|
|
|
PDF Links
Full text via DOI
Download Citation 
Print 
