| Al0.21Ga0.79As/GaAs의 변조 빔의 세기에 대한 광반사도 특성 연구 |
| 최경수1, 최순돈1, 유재인2 |
1영남대학교 신소재공학과
2대구한의대 비철금속 표면처리 센터 |
| A Study on How the Photoreflectance Characteristic in the Al0.21Ga0.79As/GaAs Heterostructure Affects Variable Pumping Intensity |
| Kyeong Su Choi1, Soon-Don Choi1, Jae-In Yu2 |
1School of Materials Science and Engineering, Yeungnam University, Gyeongsan 712-749, Republic of Korea
2Non-ferrous surfacetreatment Center, Daegu Haany University, Gyeongsan 712-715, Republic of Korea |
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Received: 3 February 2017; Accepted: 3 March 2017. Published online: 1 August 2017. |
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| ABSTRACT |
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The photoreflectance (PR) method is advantageous in that it is more convenient to use at low temperature and high temperature than electroreflectance (ER) due to the modulation of the electric field. This is caused by the recombination of the surface state charge and the minority carriers generated by the laser light. For this reason, PR makes it easier to study the microstructure of semiconductors using non-contact and non-destructive characteristics on the surface of the sample. The position of the Fermi level of the semiconductor can also be determined and the surface electric field can be optically determined. We studied the photoreflectance characteristics of the Al0.21Ga0.79As/GaAs heterostructure. We observed the A region (1.49∼1.53 eV) in the PR spectra by varying the pumping intensity in the sample. The room temperature PR spectra exhibited A region oscillations. This was found to be due to the increasing electric field intensity. |
| Keywords:
AlGaAs, GaAs, photoreflectance, intensity |
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